SI7463DP-T1-GE3 The Vishay Dale SI7463DP-T1-GE3 is a P-Channel MOSFET with a 40V drain-source voltage and 11A continuous drain current. It is housed in a surface-mount PowerPAK SO-8 package.
Mfr Part #:

SI7463DP-T1-GE3

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI7463DP-T1-GE3 is a P-Channel MOSFET with a 40V drain-source voltage and 11A continuous drain current. It is housed in a surface-mount PowerPAK SO-8 package.
✓ Total Stock: 45,205 pcs
$ Price Range: $0.99

SI7463DP-T1-GE3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
40,178 pcs
40178 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
5,027 pcs
5027 pcs On Request 1 On Request On Request On Request On Request On Request

SI7463DP-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI7463DP-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SI7463DP-T1-GE3 is a P-Channel MOSFET designed for power applications. It features a maximum drain-source voltage of 40V and a continuous drain current of up to 18.6A at 25°C ambient temperature.

 

Key electrical characteristics include a low on-resistance of 9.2mOhm at 18.6A and 10V Vgs, and a gate threshold voltage of 3V at 250µA. The MOSFET operates within a junction temperature range of -55°C to 150°C.

 

This component utilizes TrenchFET® Power MOSFET technology and comes in a low-profile PowerPAK® SO-8 package, suitable for surface mounting. The package has a profile of 1.07 mm, making it ideal for space-constrained designs.

 

Absolute maximum ratings include a gate-source voltage of ±20V and a pulsed drain current of -60A. The maximum power dissipation is rated at 5.4W at 25°C ambient.

SI7463DP-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SI7463DP-T1-GE3 P-Channel 40V 11A PowerPAK SO-8 MOSFET
Subcategory: P-Channel

SI7463DP-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI7463DP-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI7463DP-T1-GE3 Features

  • P-Channel 40V Power MOSFET.
  • Low on-resistance of 9.2mOhm.
  • Surface mount PowerPAK SO-8 package.
  • Low profile design at 1.07 mm.
  • Lead (Pb)-free and Halogen-free.

SI7463DP-T1-GE3 Applications

  • Ideal for battery protection circuit designs.
  • Used in portable electronics power management.
  • Suitable for DC-DC converter load switches.
  • Applied in automotive low-voltage switching.

SI7463DP-T1-GE3 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage for the SI7463DP-T1-GE3?

The drain-source voltage (Vds) is 40V.

What is the maximum continuous drain current?

The continuous drain current is -18.6A at 25°C ambient temperature and -15A at 70°C ambient temperature.

What is the on-resistance of the SI7463DP-T1-GE3?

The on-resistance is a maximum of 9.2mOhm at 18.6A and 10V Vgs.

What is the operating temperature range?

The operating junction and storage temperature range is -55°C to 150°C.

What package type is the SI7463DP-T1-GE3 in?

It is in a PowerPAK® SO-8 package, suitable for surface mounting.

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