| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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7,020 pcs
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7020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1,842 pcs
|
1842 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Vishay Dale SI7463DP-T1-E3 is a P-Channel MOSFET designed for power management applications. It features a 40V drain-source voltage and a low on-resistance of 9.2mOhm at 18.6A and 10V Vgs.
This MOSFET offers a continuous drain current of 11A at 25°C ambient temperature, with a maximum power dissipation of 1.9W. The operating temperature range is -55°C to 150°C.
The device utilizes TrenchFET® technology and comes in a compact PowerPAK® SO-8 package, suitable for surface mounting. Its low profile and efficient thermal performance make it a good choice for space-constrained designs.
Key electrical characteristics include a gate charge of 140 nC at 10V Vgs and a gate-source threshold voltage of 3V at 250µA. The maximum gate-source voltage is ±20V.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
40 V.
PowerPAK SO-8 surface mount.
-55°C to 150°C junction temperature.
18.6 A at 25°C ambient temperature.
140 nC measured at a 10 V gate-source voltage.
11.3 °C/W under steady state conditions.