SI7463ADP-T1-GE3

The SI7463ADP-T1-GE3 is a high-performance P-Channel power MOSFET manufactured by Vishay. Designed using TrenchFET technology, this device offers excellent switching performance and low thermal resistance. It features a maximum drain-source voltage of -40V and a continuous drain current of -46A at 25°C case temperature. The on-resistance is guaranteed to be no more than 10mΩ at a gate-source voltage of -10V, ensuring efficient power delivery with minimal conduction losses.

This MOSFET is housed in a compact, leadless PowerPAK SO-8 surface-mount package measuring 6.15 mm by 5.15 mm. The exposed copper bottom pad facilitates effective heat dissipation, supporting a maximum power dissipation of 39W under optimal cooling conditions. With an operating junction temperature range of -55°C to +150°C, it provides robust reliability across demanding industrial environments.

Key applications include load switching circuits, motor drives, and DC-DC converter stages where space constraints and thermal management are critical. The device undergoes 100% Rg and UIS testing, guaranteeing consistent gate resistance and avalanche ruggedness. Engineers can rely on its fast switching characteristics, including a typical rise time of 14ns and fall time of 11ns, for high-frequency operation.