| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
114,000 pcs
|
114000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | 2026-02-16 21:33:16 | |
|
86,500 pcs
|
86500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
36,160 pcs
|
36160 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
9,000 pcs
|
9000 pcs | On Request | 1 | On Request | On Request | 20+ | On Request | On Request | |
|
4,020 pcs
|
4020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,250 pcs
|
3250 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1 pcs
|
1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The SI7461DP-T1-GE3 is a single P-channel enhancement mode metal-oxide-semiconductor field-effect transistor manufactured by Vishay Dale. Engineered for efficient power management, this component features a maximum drain-to-source voltage rating of 60V and a gate-source voltage limit of 20V. The device is capable of delivering 8.6A of continuous drain current, making it suitable for medium-power switching tasks.
Housed in a compact PPAK SO-8 surface-mount package, the SI7461DP-T1-GE3 facilitates automated PCB assembly while minimizing board space requirements. Its low on-resistance characteristics contribute to reduced power dissipation during conduction phases. Design engineers utilize this MOSFET in DC-DC converters, motor control circuits, and load-switching architectures where reliable P-channel operation is required. The standardized lead frame and thermal pad design ensure robust heat transfer to the underlying copper pour for stable thermal performance under continuous duty cycles.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 60V.
The gate-source voltage must not exceed 20V.
It utilizes a P-channel enhancement mode configuration.
The device supports up to 8.6A of continuous current.
It is housed in a PPAK SO-8 surface-mount package.