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SI7460DP-T1-E3 The Vishay Dale SI7460DP-T1-E3 is an N-Channel MOSFET with a 60V drain-source voltage rating. It features a low Rds On of 9.6mOhm at 18A and 10V Vgs, housed in a PowerPAK SO-8 package.
Mfr Part #:

SI7460DP-T1-E3

Available from 4 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI7460DP-T1-E3 is an N-Channel MOSFET with a 60V drain-source voltage rating. It features a low Rds On of 9.6mOhm at 18A and 10V Vgs, housed in a PowerPAK SO-8 package.
✓ Total Stock: 8,975 pcs
$ Price Range: $0.99

SI7460DP-T1-E3 Available from 4 distributors

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✓ Non-Authorised
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

SI7460DP-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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SI7460DP-T1-E3 Description

Short technical summary and product information.

The Vishay Dale SI7460DP-T1-E3 is a fast-switching N-Channel Power MOSFET designed for various applications. It offers a drain-source voltage (Vds) of 60V and a continuous drain current (Id) of 11A at 25°C ambient temperature. The device exhibits a low on-state resistance (Rds On) of 9.6mOhm when driven at 10V Vgs and 18A Id, and 12mOhm at 4.5V Vgs and 16A Id.

 

This MOSFET utilizes TrenchFET technology and comes in a low-profile PowerPAK SO-8 package, suitable for surface mounting. Its operating temperature range is -55°C to 150°C. The device is rated for a maximum power dissipation of 1.9W at 25°C ambient temperature. It also features a gate charge of 100 nC at 10V Vgs and a gate-source voltage of ±20V maximum.

 

The Si7460DP-T1-E3 is available in lead-free and halogen-free options, adhering to environmental standards. Its fast switching characteristics and low thermal resistance make it suitable for power management applications where efficiency and space are critical.

SI7460DP-T1-E3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale Si7460DP N-Channel 60V Fast Switching MOSFET
Subcategory: N-Channel

SI7460DP-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI7460DP-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI7460DP-T1-E3 Features

  • 60V drain-source voltage rating.
  • Low Rds On of 9.6mOhm at 18A.
  • N-Channel MOSFET technology.
  • PowerPAK SO-8 surface mount package.
  • Fast switching capability.

SI7460DP-T1-E3 Applications

  • Ideal for power switching circuits.
  • Suitable for DC-DC converters.
  • Used in battery management systems.
  • Applicable in load switch designs.

SI7460DP-T1-E3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the SI7460DP-T1-E3?

60V.

What is the package type for this MOSFET?

PowerPAK SO-8 surface-mount package.

What is the operating temperature range?

-55°C to 150°C junction temperature.

What is the maximum gate threshold voltage?

3V at ID=250µA.

What is the on-resistance at 10V gate drive?

9.6mΩ maximum at ID=18A, VGS=10V.

What is the continuous drain current at 25°C?

The maximum continuous drain current at TA=25°C is 18A, with a nominal rating of 11A.

What is the avalanche energy rating?

125mJ maximum.

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