| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,000 pcs
|
6000 pcs | On Request | 1 | On Request | On Request | 09+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The SI7459DP-T1-GE3 from Vishay Dale is a P-Channel MOSFET designed for power management applications. It features a maximum drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 13A at ambient temperature.
This MOSFET has a low on-state resistance (Rds On) of 6.8mOhm at 22A and 10V gate-source voltage, contributing to efficient power conversion. The gate charge (Qg) is 170 nC at 10V, and the gate threshold voltage (Vgs(th)) is 3V at 250µA.
Operating within a temperature range of -55°C to 150°C (TJ), the device has a maximum power dissipation of 1.9W at ambient temperature. It is packaged in a PowerPAK SO-8 surface-mount configuration, suitable for compact designs.
The device is specified with a maximum gate-to-source voltage of ±25V. It utilizes MOSFET (Metal Oxide) technology.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 30 V.
The continuous drain current is 13A (Ta).
The Rds On is a maximum of 6.8mOhm at 22A drain current and 10V gate-source voltage.
The operating temperature range is -55°C to 150°C (TJ).
It is in a PowerPAK SO-8 package, suitable for surface mounting.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.