| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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594 pcs
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594 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
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The Vishay Dale SI7456DP-T1-GE3 is a high-performance N-Channel MOSFET designed for various electronic applications. It features a maximum drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 5.7A. The device exhibits a low on-resistance (Rds On) of 25mOhm at 9.3A and 10V gate-source voltage, ensuring efficient power handling.
This MOSFET operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 1.9W. It utilizes TrenchFET® technology for enhanced performance. The component is housed in a PowerPAK® SO-8 package, suitable for surface mounting.
Key electrical characteristics include a gate-source voltage (Vgs) of ±20V and a threshold voltage of 4V at 250µA. The device also specifies fall time, turn-on delay time, and turn-off delay time, providing insights into its switching behavior. Its RoHS3 compliance indicates adherence to environmental standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
100V.
PowerPAK SO-8 surface-mount package.
-55°C to 150°C junction temperature.
±20V.
Maximum 4V at 250µA drain current.
Maximum 25mOhm at Vgs=10V, Id=9.3A.
Maximum 44nC at Vgs=10V.