| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
203 pcs
|
203 pcs | On Request | 1 | On Request | On Request | 1836+ | On Request | On Request | |
|
44 pcs
|
44 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
8 pcs
|
8 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This Vishay Dale SI7456DP-T1-E3 is a single N-Channel MOSFET designed for various electronic applications. It features a maximum drain-to-source voltage (Vdss) of 100V and a continuous drain current (Id) of 5.7A at a specific ambient temperature (Ta).
The MOSFET has a maximum on-resistance (Rds On) of 25mOhm when tested at 9.3A and 10V gate-source voltage. The gate charge (Qg) is 44nC at 10V, and the gate threshold voltage (Vgs(th)) is 4V maximum at 250µA. The maximum gate-source voltage (Vgs) is ±20V.
Operating within a temperature range of -55°C to 150°C (TJ), this component has a maximum power dissipation of 1.9W (Ta). It utilizes MOSFET technology and is housed in a surface-mount PowerPAK SO-8 package, also referred to as Supplier Device Package.
Compliance information indicates RoHS3 compliance, MSL 1 Unlimited, and REACH Unaffected status. However, this compliance data is unverified and should be treated with low confidence.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) for the SI7456DP-T1-E3 is 100V.
The continuous drain current (Id) for the SI7456DP-T1-E3 is 5.7A at a specific ambient temperature (Ta).
The maximum on-resistance (Rds On) for the SI7456DP-T1-E3 is 25mOhm when tested at 9.3A and 10V gate-source voltage.
The SI7456DP-T1-E3 is supplied in a surface mount PowerPAK SO-8 package.
The operating temperature range for the SI7456DP-T1-E3 is -55°C to 150°C (TJ).