SI7456DDP-T1-GE3 The Vishay Dale SI7456DDP-T1-GE3 is an N-Channel MOSFET with a 100V drain-source voltage and a continuous drain current of 27.8A. It features a low on-resistance of 23mOhm at 10A, 10V.
Mfr Part #:

SI7456DDP-T1-GE3

Available from 4 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI7456DDP-T1-GE3 is an N-Channel MOSFET with a 100V drain-source voltage and a continuous drain current of 27.8A. It features a low on-resistance of 23mOhm at 10A, 10V.
✓ Total Stock: 67,586 pcs
$ Price Range: $0.99

SI7456DDP-T1-GE3 Available from 4 distributors

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SI7456DDP-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI7456DDP-T1-GE3 Description

Short technical summary and product information.

This Vishay Dale SI7456DDP-T1-GE3 is a single N-Channel Power MOSFET designed for applications such as DC/DC primary side switching, telecom/server 48V systems, and industrial power supplies. It offers a drain-source voltage of 100V and a continuous drain current of up to 27.8A at 25°C case temperature.

 

The MOSFET boasts a low on-resistance of 23mOhm at 10A and 10V Vgs, with a gate charge of 29.5 nC. It operates within a temperature range of -55°C to 150°C.

 

Packaged in a surface-mount PowerPAK SO-8, this component is suitable for various industrial and power management designs. Its TrenchFET power MOSFET technology ensures high performance and efficiency.

 

Key electrical characteristics include a gate-source voltage range of ±20V and a gate threshold voltage of 2.8V at 250µA. The device is tested for 100% Rg and UIS.

SI7456DDP-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: N-Channel 100V Power MOSFET
Subcategory: N-Channel

SI7456DDP-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI7456DDP-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI7456DDP-T1-GE3 Features

  • 100V drain-source voltage rating.
  • 27.8A continuous drain current.
  • Low 23mOhm Rds On.
  • Surface mount PowerPAK SO-8 package.
  • N-Channel TrenchFET MOSFET.

SI7456DDP-T1-GE3 Applications

  • High-current power switching circuits
  • Automotive and industrial power supplies
  • Motor control applications
  • DC-DC converters
  • Efficient load switching

SI7456DDP-T1-GE3 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the SI7456DDP-T1-GE3?

The maximum drain-source voltage is 100V.

What is the maximum continuous drain current?

The maximum continuous drain current is 27.8A at 25°C case temperature.

What is the Rds On (Max) at 10A, 10V?

The Rds On (Max) is 23mOhm at 10A, 10V.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C.

What package type is the SI7456DDP-T1-GE3?

The SI7456DDP-T1-GE3 is available in a PowerPAK SO-8 package.

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