| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
45,200 pcs
|
45200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
16,020 pcs
|
16020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,250 pcs
|
3250 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,116 pcs
|
3116 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
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This Vishay Dale SI7456DDP-T1-GE3 is a single N-Channel Power MOSFET designed for applications such as DC/DC primary side switching, telecom/server 48V systems, and industrial power supplies. It offers a drain-source voltage of 100V and a continuous drain current of up to 27.8A at 25°C case temperature.
The MOSFET boasts a low on-resistance of 23mOhm at 10A and 10V Vgs, with a gate charge of 29.5 nC. It operates within a temperature range of -55°C to 150°C.
Packaged in a surface-mount PowerPAK SO-8, this component is suitable for various industrial and power management designs. Its TrenchFET power MOSFET technology ensures high performance and efficiency.
Key electrical characteristics include a gate-source voltage range of ±20V and a gate threshold voltage of 2.8V at 250µA. The device is tested for 100% Rg and UIS.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 100V.
The maximum continuous drain current is 27.8A at 25°C case temperature.
The Rds On (Max) is 23mOhm at 10A, 10V.
The operating temperature range is -55°C to 150°C.
The SI7456DDP-T1-GE3 is available in a PowerPAK SO-8 package.