| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
60,267 pcs
|
60267 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | 1142+ | On Request | On Request | |
|
1 pcs
|
1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Siliconix SI7456CDP-T1-GE3 is an N-Channel MOSFET designed for high-efficiency switching applications. It features a 100V drain-to-source voltage and a continuous drain current of 27.5A at 25°C case temperature. The MOSFET utilizes TrenchFET technology for improved performance.
Key electrical characteristics include a low on-resistance of 23.5 mOhm at 10A and 10V, a gate threshold voltage of 2.8V at 250µA, and a gate charge of 23 nC at 10V. The device operates within a temperature range of -55°C to 150°C.
This MOSFET is packaged in a PowerPAK SO-8 surface mount package, suitable for various industrial and telecom applications such as DC/DC primary side switching and 48V full/half-bridge converters. It is halogen-free and RoHS3 compliant.
Absolute maximum ratings include a continuous drain current of 22A at 70°C case temperature and a pulsed drain current of 50A. Power dissipation is rated at 35.7W at 25°C case temperature and 5W at 25°C ambient temperature.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage rating (Vds) for the SI7456CDP-T1-GE3 is 100V.
The continuous drain current (Id) is 27.5A at 25°C case temperature.
The on-resistance (Rds On) is a maximum of 23.5mOhm at 10A and 10V gate-source voltage.
The SI7456CDP-T1-GE3 is housed in a PowerPAK SO-8 surface mount package.
The operating junction and storage temperature range is -55°C to 150°C.
Yes, the SI7456CDP-T1-GE3 is RoHS3 compliant.
Yes, the SI7456CDP-T1-GE3 is halogen-free according to IEC 61249-2-21 definition.