SI7454DP-T1-GE3

The SI7454DP-T1-GE3 is a single N-Channel power MOSFET manufactured by Vishay Dale. This component is optimized for general-purpose switching and amplification applications requiring efficient power management. It features a robust 100V drain-to-source voltage rating and supports a continuous drain current of 5A under ambient temperature conditions. The device achieves a maximum on-state resistance of 34mOhm when driven at 10V, ensuring minimal conduction losses in high-efficiency circuits. Gate threshold voltage is specified at a maximum of 4V at 250µA, facilitating reliable turn-on with standard logic-level drivers. Additional electrical characteristics include a maximum gate charge of 30nC at 10V and a maximum gate-source voltage of ±20V. Thermal performance is rated for a maximum power dissipation of 1.9W at ambient temperature, with an operating junction temperature range spanning from -55°C to 150°C. The component is housed in a PowerPAK SO-8 surface-mount package, providing a compact footprint suitable for space-constrained PCB layouts. It is compliant with RoHS3 standards and unaffected by REACH regulations.

Engineers can utilize this MOSFET in DC-DC converters, motor drivers, and load switch modules where low conduction loss and compact form factor are required. The 4V max Vgs(th) ensures compatibility with standard logic control signals, simplifying interface design.