| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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258,286 pcs
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258286 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The SI7454DP-T1-E3 is an N-Channel enhancement-mode power MOSFET from Vishay Dale, designed for moderate voltage and current applications. It features a drain-source voltage rating of 100V and a continuous drain current of 5A at ambient temperature (Ta), with a maximum drain-source on-resistance of 34 mOhm at a gate drive of 10V and current of 7.8A. The gate threshold voltage is 4V at 250µA drain current, and the maximum gate charge is ̄30 nC at 10V gate-source voltage.
This MOSFET is housed in a PowerPAK® SO-8 surface-mount package, which offers good thermal performance with a maximum power dissipation of 1.9W at ambient temperature. It operates over a junction temperature range of -55°C to 150°C, making it suitable for industrial and automotive environments. The device is RoHS3 compliant and designed with a moisture sensitivity level of 1 (unlimited).
With its moderate voltage and current ratings, the SI7454DP-T1-E3 is well-suited for power management circuits such as DC-DC converters, load switches, and battery protection. Its low gate charge allows for efficient switching at moderate frequencies.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage rating is 100V.
It is available in a PowerPAK SO-8 surface mount package.
The operating junction temperature range is -55°C to 150°C.
The maximum on-resistance is 34mOhm at Vgs=10V and Id=7.8A.
The gate charge is 30nC at Vgs=10V.
The maximum gate threshold voltage is 4V at Id=250µA.
The continuous drain current is 5A at ambient temperature.