| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
36,160 pcs
|
36160 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,047 pcs
|
2047 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request | |
|
1,086 pcs
|
1086 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI7454DDP-T1-GE3 is a high-performance N-Channel MOSFET designed for various applications including DC/DC primary side switching, telecom/server 48V systems, and industrial uses. It features a TrenchFET power MOSFET design, offering robust performance.
Key electrical specifications include a maximum drain-source voltage (Vds) of 100V and a continuous drain current (Id) of 21A at 25°C case temperature. The on-resistance (Rds On) is rated at a maximum of 33mOhm at 10A and 10V gate-source voltage. Gate charge (Qg) is typically 19.5 nC at 10V.
This MOSFET operates within a temperature range of -55°C to +150°C (TJ). It is housed in a PowerPAK SO-8 surface-mount package, suitable for space-constrained designs. The device is tested for 100% Rg and UIS, ensuring reliability.
Applications include DC/DC primary side switching, telecom/server 48V full/half-bridge DC/DC converters, industrial applications, and synchronous rectification.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) for the SI7454DDP-T1-GE3 is 100V.
The maximum continuous drain current (Id) for the SI7454DDP-T1-GE3 is 21A at a case temperature of 25°C.
The maximum on-resistance (Rds On) for the SI7454DDP-T1-GE3 is 33mOhm when measured at 10A drain current and 10V gate-source voltage.
The operating junction and storage temperature range for the SI7454DDP-T1-GE3 is -55°C to +150°C.
The SI7454DDP-T1-GE3 is supplied in a PowerPAK SO-8 package for surface mounting.