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SI7450DP-T1-GE3 The Vishay SI7450DP-T1-GE3 is an N-Channel MOSFET with a 200V Drain-Source Voltage and a continuous drain current of 5.3A. It features a low Rds On of 80 mOhm at 10V Vgs.
Mfr Part #:

SI7450DP-T1-GE3

Available from 4 distributors
Mfr Name: Vishay Dale
Vishay Dale
The Vishay SI7450DP-T1-GE3 is an N-Channel MOSFET with a 200V Drain-Source Voltage and a continuous drain current of 5.3A. It features a low Rds On of 80 mOhm at 10V Vgs.
Total Stock: 92,982 pcs

SI7450DP-T1-GE3 Available from 4 distributors

Authorised
Non-Authorised

SI7450DP-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Avalanche Current
Continuous Drain Current
Continuous source current
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
ID
Lead Spacing
Lead Style
Maximum junction-to-ambient
Maximum junction-to-case (drain)
Maximum power dissipation
Mounting Type
Operating Junction and Storage Temperature Range
Operating Temperature
Power Dissipation (Max)
Pulsed Drain Current
Qg typ.
RDS(on) max. at VGS = 10 V
RDS(on) max. at VGS = 6 V
Rds On (Max) @ Id, Vgs
Soldering recommendations
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI7450DP-T1-GE3 Description

Short technical summary and product information.

The Vishay SI7450DP-T1-GE3 is an N-Channel MOSFET designed for various power applications. It offers a high Drain-to-Source Voltage (Vdss) of 200V and a continuous drain current (Id) of up to 5.3A.

 

This MOSFET boasts a low on-resistance (Rds On) of 80 mOhm at a gate-source voltage (Vgs) of 10V, and 90 mOhm at 6V Vgs. The gate charge (Qg) is typically 34 nC. Its maximum power dissipation is rated at 5.2W.

 

The device operates within a junction temperature range of -55°C to 150°C. It is housed in a PowerPAK® SO-8 package, designed for surface mounting, and features a low profile of 1.07 mm.

 

Applications include primary side switching for high-density DC/DC converters, 48V DC/DC systems in telecom and servers, and industrial or automotive 42V systems.

SI7450DP-T1-GE3 Quick Information

Product Type: MOSFET
Series: TrenchFET
Canonical Name: Vishay SI7450DP-T1-GE3 N-Channel 200V MOSFET
Subcategory: N-Channel

SI7450DP-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: Non-Compliant
Lead Free: Yes

SI7450DP-T1-GE3 Features

  • 200V Drain-to-Source Voltage (Vdss).
  • Low Rds On of 80 mOhm at 10V.
  • Continuous Drain Current up to 5.3A.
  • PowerPAK SO-8 surface mount package.
  • Optimized for fast switching applications.

SI7450DP-T1-GE3 Applications

  • Primary side switching for DC/DC.
  • Used in 48V telecom systems.
  • Suitable for industrial applications.
  • Designed for 42V automotive use.

SI7450DP-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum Drain to Source Voltage (Vdss) for the SI7450DP-T1-GE3?

The maximum Drain to Source Voltage (Vdss) is 200 V.

What is the Rds On (Max) for the SI7450DP-T1-GE3 at Vgs = 10V?

The Rds On (Max) is 0.08 Ohm at Vgs = 10V.

What is the continuous drain current for the SI7450DP-T1-GE3?

The continuous drain current is 5.3 A.

What is the operating temperature range for this MOSFET?

The operating temperature range is -55°C to 150°C.

What type of MOSFET is the SI7450DP-T1-GE3?

It is an N-Channel MOSFET.

What package is the SI7450DP-T1-GE3 supplied in?

It is supplied in a PowerPAK® SO-8 package.

Is the SI7450DP-T1-GE3 RoHS compliant?

Yes, it is RoHS3 Compliant.

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