Mfr Part #:

SI7450DP-T1-E3

Name: SI7450DP-T1-E3
Brand: Vishay
SKU: SI7450DP-T1-E3
Availability: InStock

Mfr Name: Vishay

Description:

MOSFET N-CH 200V 3.2A PPAK SO-8

✓ Total Stock: 18,493 pcs

SI7450DP-T1-E3 Available from 4 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Hybrid Electronics ✓ Non-Authorised Inventory information	3 pcs On Request	3 pcs	On Request	1	On Request	On Request	803	On Request	2026-05-08 04:17:47
Braun Electronic Components ✓ Non-Authorised Inventory information	1,000 pcs On Request	1000 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Bristol Electronics ✓ Non-Authorised Inventory information	2,490 pcs On Request	2490 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Components Technology Group, Inc. ✓ Non-Authorised Inventory information	15,000 pcs On Request	15000 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

Short technical summary and product information.

MOSFET N-CH 200V 3.2A PPAK SO-8

Mfr Standard Lead Time: 12 weeks (varies by distributor)

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Same form/fit/function or matching attribute configuration across different manufacturers.

SI7450DP-T1-GE3

Vishay

MOSFET N-CH 200V 3.2A PPAK SO-8

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Vishay
Current	3.2A (Ta)
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	42 nC @ 10 V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Power Dissipation (Max)	1.9W (Ta)
Rds On (Max) @ Id, Vgs	80mOhm @ 4A, 10V
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	4.5V @ 250µA