1.5SMC36CAR6
Taiwan Semiconductor
The 1.5SMC36CAR6 is a bidirectional TVS diode from Taiwan Semiconductor. It offers excellent clamping capability with a 36V nominal breakdown voltage.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
30,133 pcs
|
30133 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Mounting Type | |
| SVHC Present | |
| Tape & Reel |
The Vishay Dale SI7450DP is an N-Channel Power MOSFET designed for high-density DC/DC conversion, telecom/server 48 V DC/DC, and industrial/automotive applications.
This MOSFET boasts a Drain-Source Voltage (Vds) of 200 V and a low on-resistance (RDS(on)) of 0.080 Ω at VGS = 10 V. It features TrenchFET power MOSFET technology, ensuring efficient power handling. The device is PWM optimized for fast switching and has a typical gate charge (Qg) of 34 nC.
Packaged in a low-profile PowerPAK SO-8, the SI7450DP offers excellent thermal performance with a junction-to-case thermal resistance of 1.8 °C/W. It is suitable for surface mounting and is designed for demanding applications requiring high efficiency and reliability.
Key electrical parameters include a continuous drain current (Id) of up to 5.3 A at 25°C ambient temperature and a pulsed drain current (Idm) of 40 A. The operating junction and storage temperature range is -55°C to +150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (VDS) is 200V.
The SI7450DP is available in a PowerPAK SO-8 surface-mount package.
The operating junction and storage temperature range is -55°C to +150°C.
The continuous drain current is 5.3A at TA=25°C.
The maximum on-resistance is 0.080Ω at VGS=10V.
Maximum power dissipation is 5.2W at TA=25°C.