| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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30,133 pcs
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30133 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The SI7445DP-T1 is a P-Channel MOSFET using TrenchFET technology from Vishay Dale. It is designed for power switching and load management applications. The device provides a minimum drain-source breakdown voltage of 20 V and a maximum gate threshold voltage of -1.5 V. It can handle a continuous drain current of 12 A at 25°C with a low maximum on-resistance of 0.012 Ω at VGS = -10V.
The MOSFET features a maximum gate-source voltage of -20 V. Total gate charge is 25 nC, with input capacitance 700 pF, output capacitance 150 pF, and reverse transfer capacitance 100 pF. These characteristics support efficient switching in medium-power circuits.
The SI7445DP-T1 is offered in a PPAK, 1212-8 package and is intended for surface mount assembly. Its operating temperature range is -55°C to 150°C, making it suitable for industrial and automotive environments where thermal stress is expected.
Typical applications include DC-DC converters, power management systems, load switches, and motor control circuits where low-side or high-side switching is required. The TrenchFET process helps reduce conduction and switching losses.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum drain-source breakdown voltage is 20 V at ID = 250µA and VGS = -10V.
The maximum gate threshold voltage is -1.5 V at ID = 250µA and VDS = -5V.
The maximum drain-source on-resistance is 0.012 Ω at ID = 12A and VGS = -10V.
The continuous drain current is 12 A at 25°C with VGS = -10V.
The package type is PPAK, 1212-8, with surface mount mounting.
The operating temperature range is -55°C to 150°C.