| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
134 pcs
|
134 pcs | On Request | 1 | On Request | On Request | 11+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The SI7440DP-T1-GE3 is an N-Channel MOSFET manufactured by Vishay Dale. It features a drain-to-source voltage (Vdss) of 30V and a continuous drain current of 12A at 25°C ambient temperature. The device offers a maximum on-resistance of 6.5mOhm at a gate drive of 10V and 21A drain current.
This MOSFET uses MOSFET (Metal Oxide) technology and supports drive voltages of 4.5V and 10V for optimized Rds(on) performance. The gate threshold voltage is nominally 3V at 250µA drain current. Maximum gate charge is 35nC at 4.5V gate-source voltage, and the maximum gate-source voltage rating is ±20V.
The device is housed in a PowerPAK SO-8 package and is designed for surface mount mounting. It can operate over a junction temperature range of -55°C to 150°C, with a maximum power dissipation of 1.9W at ambient temperature.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 30V.
The continuous drain current (Id) is 12A at 25°C ambient temperature.
The maximum on-resistance (Rds(on)) is 6.5mOhm at 21A drain current and 10V gate drive.
The device is supplied in a PowerPAK SO-8 package for surface mount mounting.
The operating junction temperature range is -55°C to 150°C.