| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
16,436 pcs
|
16436 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,619 pcs
|
1619 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
250 pcs
|
250 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Rds On (Max) @ Id, Vgs | |
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The Vishay Dale SI7439DP-T1-E3 is a P-Channel MOSFET designed for power applications. It features a maximum drain-source voltage (Vds) of 150V and a low on-resistance (Rds On) of 90mOhm at 5.2A and 10V Vgs. The device also offers a typical gate charge (Qg) of 88nC at 10V.
This MOSFET is constructed using TrenchFET® technology, providing ultra-low on-resistance critical for application efficiency. It is packaged in a low-profile PowerPAK® SO-8 package, measuring only 1.07mm in height, making it suitable for space-constrained designs. The operating temperature range is from -55°C to 150°C.
Applications for the SI7439DP-T1-E3 include active clamp circuits in intermediate DC/DC power supplies. The device is 100% Rg and avalanche tested, ensuring reliability. It is available in lead (Pb)-free and halogen-free options.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-150 V
PowerPAK SO-8
-55°C to 150°C
-5.2 A at 25°C ambient temperature (datasheet)
90 mOhm at Vgs = -10 V
88 nC typical at Vgs = -10 V
5.4 W at 25°C ambient temperature