SI7431DP-T1-GE3 The Vishay Dale SI7431DP-T1-GE3 is a P-Channel MOSFET with a 200V drain-source voltage and a maximum power dissipation of 1.9W. It features a Surface Mount PowerPAK SO-8 package.
Mfr Part #:

SI7431DP-T1-GE3

Available from 6 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI7431DP-T1-GE3 is a P-Channel MOSFET with a 200V drain-source voltage and a maximum power dissipation of 1.9W. It features a Surface Mount PowerPAK SO-8 package.
✓ Total Stock: 137,760 pcs
$ Price Range: $0.99

SI7431DP-T1-GE3 Available from 6 distributors

✓ Authorised
✓ Non-Authorised

SI7431DP-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Conflict Minerals
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI7431DP-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SI7431DP-T1-GE3 is a P-Channel MOSFET designed for power applications. It offers a drain-source voltage (Vds) of 200V and a continuous drain current of up to 3.8A at 25°C.

 

Key electrical characteristics include a maximum on-resistance (Rds On) of 174mOhm at 10V Vgs and a typical gate charge (Qg) of 88nC. The device operates within a temperature range of -55°C to 150°C (TJ).

 

This MOSFET is housed in a PowerPAK SO-8 package, suitable for surface mounting. Its thermal performance is supported by a junction-to-ambient thermal resistance of 65°C/W and a junction-to-case thermal resistance of 1.5°C/W.

 

The product is RoHS3 compliant and has an MSL rating of 1.

SI7431DP-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SI7431DP-T1-GE3 P-Channel 200V MOSFET
Subcategory: Transistors - FETs, MOSFETs - Single

SI7431DP-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI7431DP-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI7431DP-T1-GE3 Features

  • P-Channel 200V MOSFET
  • 174mOhm max Rds On at 10V
  • Surface Mount PowerPAK SO-8 package
  • 1.9W max power dissipation
  • RoHS3 Compliant

SI7431DP-T1-GE3 Applications

  • High-side load switching in power supplies.
  • DC-DC converter circuits requiring P-channel MOSFET.
  • Battery protection and power management systems.
  • Motor control and actuator drive applications.

SI7431DP-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

-200V maximum.

What package type is this MOSFET available in?

PowerPAK SO-8 surface mount package.

What is the operating temperature range?

-55°C to 150°C junction temperature.

What is the continuous drain current rating?

-3.8A at 25°C ambient, derated to -3.0A at 70°C.

What is the on-resistance of this MOSFET?

174mOhm maximum at 10V gate drive, 180mOhm at 6V.

What is the gate charge?

88nC typical, 135nC maximum at 10V gate drive.

What is the power dissipation rating?

1.9W at 25°C ambient, 1.2W at 70°C.

Home
Account

Categories