| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
16,020 pcs
|
16020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,539 pcs
|
3539 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Height | |
| Length | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id | |
| Width |
The Vishay Dale SI7431DP-T1-E3 is a P-Channel MOSFET designed for power applications. It offers a high drain-source voltage rating of 200V and a continuous drain current of up to 3.8A at 25°C. The MOSFET exhibits a low on-resistance, with a maximum of 174mOhm at 3.8A and 10V gate-source voltage.
This device utilizes TrenchFET® power MOSFET technology, known for its critical role in applications requiring ultra-low on-resistance. It comes in a PowerPAK® SO-8 package, providing a low profile of 1.07mm and low thermal resistance. The operating temperature range is from -55°C to 150°C.
Key electrical characteristics include a gate charge of 88nC typical and a gate threshold voltage of 4V at 250µA. The MOSFET is 100% R_g and avalanche tested, ensuring reliability. It is suitable for applications such as active clamps in intermediate DC/DC power supplies.
The SI7431DP-T1-E3 is surface-mounted and comes in a PowerPAK SO-8 package. It is available in lead (Pb)-free and halogen-free options.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Drain to Source Voltage (Vdss) for the SI7431DP-T1-E3 is -200 V.
The continuous drain current at TA = 25 °C is -3.8 A.
The maximum Gate-Source Voltage (Vgs) is ±20 V.
The maximum power dissipation at TA = 25 °C is 5.4 W.
The operating junction and storage temperature range is -55°C to 150°C.
The maximum on-resistance (Rds On) at Vgs = -10 V is 174 mOhm.
The typical gate charge (Qg) at Vgs = -10 V is 88 nC.