| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
34,438 pcs
|
34438 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
662 pcs
|
662 pcs | On Request | 1 | On Request | On Request | 09+08+ | On Request | On Request | |
|
30 pcs
|
30 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The SI7430DP-T1-GE3 is a 150V N-Channel MOSFET from Vishay Dale, designed for high-efficiency power switching applications. It features a continuous drain current rating of 26A at 25°C case temperature and a maximum drain-source on-resistance of 45 milliohms at 10V gate drive. The device is capable of dissipating up to 64W at 25°C case temperature. It is housed in a compact PPAK SO-8 surface-mount package, suitable for space-constrained designs. With a gate threshold voltage of 4.5V maximum, it can be driven by logic-level signals. The input capacitance of 1735pF and total gate charge of 43nC allow for efficient switching at moderate frequencies. Operating junction temperature range is -55°C to 150°C, ensuring reliability in harsh environments.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
150V minimum at VGS=0V, ID=250µA.
26A maximum at case temperature 25°C.
45 milliohms maximum at 5A drain current and 10V gate voltage.
4.5V maximum at 250µA drain current.
43 nC maximum at 10V gate voltage.
1735 pF maximum at 50V drain-source voltage.
-55°C to 150°C junction temperature.