SI7430DP-T1-E3 The Vishay Dale SI7430DP-T1-E3 is an N-Channel MOSFET with a 150V drain-source voltage and 26A continuous drain current. It is supplied in a PowerPAK SO-8 surface mount package.
Mfr Part #:

SI7430DP-T1-E3

Available from 3 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI7430DP-T1-E3 is an N-Channel MOSFET with a 150V drain-source voltage and 26A continuous drain current. It is supplied in a PowerPAK SO-8 surface mount package.
✓ Total Stock: 10,652 pcs
$ Price Range: $0.99

SI7430DP-T1-E3 Available from 3 distributors

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✓ Non-Authorised
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6,216 pcs
6216 pcs On Request 1 On Request On Request On Request On Request On Request
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4,020 pcs
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416 pcs
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SI7430DP-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI7430DP-T1-E3 Description

Short technical summary and product information.

The Vishay Dale SI7430DP-T1-E3 is an N-Channel MOSFET designed for power switching applications. It features a maximum drain-source voltage (Vds) of 150V and a continuous drain current (Id) of 26A at 25°C case temperature.

 

Key electrical characteristics include a low on-resistance (Rds On) of 45mOhm at 5A and 10V Vgs, a gate threshold voltage (Vgs(th)) of 4.5V at 250µA, and a gate charge (Qg) of 43nC at 10V Vgs. The device operates within a temperature range of -55°C to 150°C.

 

This MOSFET is housed in a PowerPAK SO-8 package, suitable for surface mounting. Its design includes features like low Qgd for reduced dV/dt and shoot-through, and it is tested for R g and UIS.

 

Applications include primary side switching and single-ended power switching.

SI7430DP-T1-E3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Siliconix Si7430DP N-Channel 150V MOSFET
Subcategory: N-Channel

SI7430DP-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI7430DP-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI7430DP-T1-E3 Features

  • 150V drain-source breakdown voltage.
  • 26A continuous drain current.
  • Low 45mOhm on-resistance.
  • PowerPAK SO-8 surface mount package.
  • N-Channel MOSFET technology.

SI7430DP-T1-E3 Applications

  • Ideal for motor control driver circuits.
  • Used in DC-DC converter power stages.
  • Suitable for battery protection switch boards.
  • Applied in industrial load switching systems.

SI7430DP-T1-E3 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the SI7430DP-T1-E3?

The maximum drain-source voltage is 150 V.

What is the continuous drain current of the SI7430DP-T1-E3?

The continuous drain current is 26 A at a case temperature of 25°C.

What is the on-resistance of the SI7430DP-T1-E3?

The maximum on-resistance is 45 mOhm at 5A and 10V Vgs.

What is the operating temperature range for this MOSFET?

The operating temperature range is -55°C to 150°C.

What package type is the SI7430DP-T1-E3 supplied in?

It is supplied in a PowerPAK SO-8 package.

Is the SI7430DP-T1-E3 RoHS compliant?

Yes, it is RoHS3 Compliant.

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