| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,958 pcs
|
2958 pcs | On Request | 1 | On Request | On Request | 13+ | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
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| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Siliconix SI7423DN-T1-GE3 is a P-Channel MOSFET designed for various applications, including battery switching. It offers a drain-source voltage (Vds) of 30V and a continuous drain current (Id) of 7.4A at 25°C ambient temperature.
Key electrical characteristics include a low on-state resistance (Rds(on)) of 18mΩ at a gate-source voltage (Vgs) of 10V and a drain current of 11.7A. The gate threshold voltage (Vgs(th)) is 3V at 250µA, and the maximum gate-source voltage is ±20V. The device has a maximum power dissipation of 1.5W at 25°C ambient temperature.
This MOSFET utilizes TrenchFET technology and comes in a compact PowerPAK 1212-8 surface-mount package, offering a low profile of 1.07mm. The operating temperature range is -55°C to 150°C (TJ). It is also halogen-free according to IEC 61249-2-21 standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30 V
PowerPAK 1212-8
-55°C to 150°C
7.4 A
3 V at 250 µA
1.5 W at 25°C ambient