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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
97 pcs
|
97 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Continuous Drain Current (Nominal) | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This Vishay Dale SI7423DN-T1-E3 is a P-Channel MOSFET designed for discrete semiconductor applications. It features a maximum drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 7.4A. The MOSFET has a low on-resistance (Rds On) of 18mOhm at 11.7A and 10V gate-source voltage, and a gate charge (Qg) of 56nC at 10V.
With a gate threshold voltage (Vgs(th)) of 3V at 250µA and a maximum gate source voltage (Vgs) of ±20V, this device offers reliable performance. It operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 1.5W (Ta).
The MOSFET is packaged in a PowerPAK® 1212-8 case and is designed for surface mounting. It is suitable for various electronic designs requiring efficient switching and power management.
Compliance information indicates RoHS3 compliance, MSL 1, and REACH unaffected status, though these are not verified by official documentation.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V maximum.
7.4A at 25°C ambient (Ta) and 11.7A with Vgs=10V.
18mOhm maximum at 11.7A and 10V gate drive.
3V maximum at 250µA drain current.
-55°C to 150°C junction temperature.
PowerPAK 1212-8 surface mount package.
56nC maximum at 10V gate-source voltage.