| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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255 pcs
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255 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This Vishay Dale SI7421DN-T1-E3 is a P-Channel MOSFET designed for various electronic applications. It offers a drain-to-source voltage (Vdss) of 30V and a continuous drain current (Id) of 6.4A at ambient temperature.
The MOSFET exhibits a low on-resistance (Rds On) of 25mOhm when measured at a drain current of 9.8A and a gate-to-source voltage (Vgs) of 10V. The gate threshold voltage (Vgs(th)) is a maximum of 3V at 250µA, and the maximum gate-to-source voltage is ±20V.
Key electrical characteristics include a gate charge (Qg) of 40nC at 10V Vgs and a maximum power dissipation of 1.5W at ambient temperature. The operating temperature range is from -55°C to 150°C (TJ).
Packaged in a PowerPAK® 1212-8, this component is designed for surface mounting. Its technology is MOSFET (Metal Oxide), and it is classified as a P-Channel FET.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
PowerPAK 1212-8.
--55°C to 150°C (junction).
3V maximum at 250µA drain current.
25mOhm maximum at 9.8A drain current and 10V gate drive.
4.5V or 10V.