SI7415DN-T1-GE3 The Vishay Dale SI7415DN-T1-GE3 is a P-Channel MOSFET with a 60V drain-source voltage and a continuous drain current of 3.6A. It features a low on-resistance of 0.065 Ohms at 10V gate-source voltage.
Mfr Part #:

SI7415DN-T1-GE3

Available from 4 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI7415DN-T1-GE3 is a P-Channel MOSFET with a 60V drain-source voltage and a continuous drain current of 3.6A. It features a low on-resistance of 0.065 Ohms at 10V gate-source voltage.
✓ Total Stock: 39,732 pcs
$ Price Range: $0.99

SI7415DN-T1-GE3 Available from 4 distributors

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SI7415DN-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI7415DN-T1-GE3 Description

Short technical summary and product information.

This Vishay Dale SI7415DN-T1-GE3 is a P-Channel MOSFET designed for various applications including load switches and motor drives. It offers a maximum drain-source voltage of 60V and a continuous drain current of 3.6A at 25°C ambient temperature.

 

The MOSFET exhibits a low on-resistance, with a maximum of 0.065 Ohms at a gate-source voltage of -10V and 5.7A drain current. It also has an on-resistance of 0.110 Ohms at -4.5V gate-source voltage. The device operates within a junction and storage temperature range of -55°C to +150°C.

 

Packaged in a PowerPAK 1212-8, this component is designed for surface mounting. The datasheet indicates a maximum power dissipation of 3.8W at 25°C ambient temperature and 2.0W at 70°C ambient temperature. Thermal resistance from junction to ambient is 33°C/W for transient conditions and 81°C/W for steady state.

SI7415DN-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SI7415DN-T1-GE3 P-Channel 60V 3.6A PowerPAK 1212-8 MOSFET
Subcategory: P-Channel

SI7415DN-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI7415DN-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI7415DN-T1-GE3 Features

  • P-Channel 60V MOSFET.
  • Low on-resistance of 0.065 Ohms.
  • Surface mount PowerPAK 1212-8 package.
  • Continuous drain current of 3.6A.
  • Wide operating temperature range.

SI7415DN-T1-GE3 Applications

  • Suitable for load switches.
  • Used in half-bridge motor drives.
  • Applicable to buck converters.

SI7415DN-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage rating of the SI7415DN-T1-GE3?

The maximum drain-to-source voltage (Vdss) is -60V.

What is the operating junction temperature range?

The operating junction and storage temperature range is -55°C to 150°C.

What is the package type for this MOSFET?

The device is supplied in a PowerPAK 1212-8 surface mount package.

What is the continuous drain current rating?

The maximum continuous drain current is -5.7A at 25°C and -4.6A at 70°C.

What is the on-resistance of the SI7415DN-T1-GE3?

The maximum on-resistance is 0.065Ω at Vgs=-10V and 0.110Ω at Vgs=-4.5V.

What is the typical gate charge?

The typical gate charge is 15nC at Vgs=-10V.

What is the gate threshold voltage?

The maximum gate threshold voltage is 3V at Id=250µA.

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