| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,550 pcs
|
2550 pcs | On Request | 1 | On Request | On Request | 10+ | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The SI7413DN-T1-E3 is a single P-Channel MOSFET manufactured by Vishay Dale. This device is optimized for low-side switching and load management applications requiring fast switching speeds and low conduction losses. It features a maximum drain-to-source voltage of 20V and supports a continuous drain current of 8.4A at ambient temperature. The on-resistance is specified at 15mΩ when driven at 4.5V, ensuring efficient power delivery. Gate charge is limited to 51nC at 4.5V, facilitating rapid turn-on and turn-off transitions. The component operates reliably across a junction temperature range of -55°C to 150°C and dissipates up to 1.5W of power. It is housed in a compact PowerPAK 1212-8 surface mount package, ideal for space-constrained PCB designs. The device complies with RoHS3 standards and is unaffected by REACH regulations.
Buyer Summary: Order SI7413DN-T1-E3 P-Channel MOSFETs for compact power switching designs. Key specifications include 20V Vdss, 8.4A Id, 15mΩ Rds(on), and PowerPAK 1212-8 packaging. Verify lead times and distributor availability before procurement.
Engineering Summary: Designed for low-voltage DC-DC converters and battery protection circuits. The 15mΩ Rds(on) at 4.5V minimizes conduction loss, while 51nC gate charge supports high-frequency operation. Ensure gate drive voltages stay within ±8V limits. The PowerPAK 1212-8 footprint requires careful thermal management due to the 1.5W dissipation limit. Junction temperature must remain between -55°C and 150°C for reliable performance.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 20V.
The maximum continuous drain current is 8.4A at ambient temperature.
The maximum on-resistance is 15mΩ at 4.5V gate drive with 13.2A drain current.
It is housed in a PowerPAK 1212-8 surface-mount package.
The operating junction temperature range is -55°C to 150°C.
The maximum gate threshold voltage is 1V at 400µA drain current.