| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
539 pcs
|
539 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI7411DN-T1-GE3 is a P-Channel MOSFET designed for power management applications. It features a maximum drain-source voltage (Vdss) of 20V and a continuous drain current (Id) of 7.5A at ambient temperature.
This MOSFET utilizes Metal Oxide Semiconductor (MOS) technology and is housed in a PowerPAK® 1212-8 package, suitable for surface mounting. Key electrical characteristics include a gate charge (Qg) of 41 nC at 4.5V Vgs and a maximum on-resistance (Rds On) of 19mOhm at 11.4A and 4.5V Vgs. The device operates within a temperature range of -55°C to 150°C (TJ).
With a maximum power dissipation of 1.5W (Ta), this component is engineered for reliability and performance in various electronic circuits. The P-Channel configuration and specific voltage and current ratings make it suitable for switching and amplification tasks.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 20V.
The continuous drain current is 7.5A at ambient temperature.
The maximum on-resistance is 19mOhm at 11.4A drain current and 4.5V gate-source voltage.
It uses a PowerPAK 1212-8 surface mount package.
The operating junction temperature range is -55°C to 150°C.
The maximum gate threshold voltage is 1V at 300µA drain current.
The maximum gate-source voltage is ±8V.