SI7411DN-T1-E3 The Vishay Dale SI7411DN-T1-E3 is a P-Channel MOSFET with a 20V drain-source voltage and 7.5A continuous drain current. It features a Surface Mountable PowerPAK® 1212-8 package.
Mfr Part #:

SI7411DN-T1-E3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI7411DN-T1-E3 is a P-Channel MOSFET with a 20V drain-source voltage and 7.5A continuous drain current. It features a Surface Mountable PowerPAK® 1212-8 package.
✓ Total Stock: 1,917 pcs
$ Price Range: $0.99

SI7411DN-T1-E3 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,917 pcs
1917 pcs On Request 1 On Request On Request 10+ On Request On Request

SI7411DN-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI7411DN-T1-E3 Description

Short technical summary and product information.

This Vishay Dale SI7411DN-T1-E3 is a P-Channel MOSFET designed for various electronic applications. It offers a drain-source voltage (Vdss) of 20V and a continuous drain current of 7.5A at ambient temperature.

 

The MOSFET has a gate-to-source voltage (Vgs) range of ±8V and a gate threshold voltage (Vgs(th)) of 1V at 300µA. The Rds On resistance is a maximum of 19mOhm at 11.4A and 4.5V Vgs. Its operating temperature range is from -55°C to 150°C (TJ).

 

The device utilizes MOSFET (Metal Oxide) technology and is packaged in a PowerPAK® 1212-8, suitable for surface mounting. The maximum power dissipation is rated at 1.5W (Ta). It is RoHS3 Compliant and has an MSL of 1 Unlimited.

SI7411DN-T1-E3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SI7411DN-T1-E3 P-Channel MOSFET
Subcategory: MOSFETs

SI7411DN-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI7411DN-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI7411DN-T1-E3 Features

  • P-Channel MOSFET with 20V Vds.
  • 7.5A continuous drain current.
  • Low Rds On resistance.
  • Surface mount PowerPAK® 1212-8 package.
  • Wide operating temperature range.

SI7411DN-T1-E3 Applications

  • Suitable for power switching applications.
  • Used in electronic circuit designs.
  • Ideal for compact applications.
  • General purpose MOSFET use.

SI7411DN-T1-E3 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the SI7411DN-T1-E3?

The maximum drain-source voltage (Vdss) is 20V.

What is the continuous drain current rating?

The continuous drain current is 7.5A at ambient temperature.

What is the on-resistance of this MOSFET?

The maximum on-resistance is 19mOhm at a gate-source voltage of 4.5V and drain current of 11.4A.

What package is the SI7411DN-T1-E3 available in?

It is available in a surface-mount PowerPAK 1212-8 package.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

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