| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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90,400 pcs
|
90400 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This Vishay Dale SI7409ADN-T1-GE3 is a P-Channel MOSFET featuring a 30V drain-to-source voltage (Vdss) and a maximum continuous drain current of 7A at ambient temperature. It offers a low on-resistance of 19mOhm maximum at 11A and 4.5V gate-source voltage, with a gate drive voltage range of 2.5V to 4.5V.
The MOSFET operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 1.5W (Ta). It utilizes Metal Oxide Semiconductor (MOSFET) technology and comes in a PowerPAK® 1212-8 package suitable for surface mounting.
Key electrical characteristics include a gate charge of 40nC at 4.5V and a gate threshold voltage of 1.5V maximum at 250µA. The component is RoHS3 compliant and has an MSL rating of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
7A at ambient temperature.
19mOhm maximum at 11A drain current and 4.5V gate voltage.
40nC maximum at 4.5V gate-source voltage.
-55°C to 150°C (junction temperature).
PowerPAK 1212-8 surface mount package.
1.5V maximum at 250µA drain current.