SI7405BDN-T1-GE3 The Vishay Dale SI7405BDN-T1-GE3 is a P-Channel MOSFET with a 12V drain-source voltage and 16A continuous drain current. It is designed for surface mounting in a PowerPAK 1212-8 package.
Mfr Part #:

SI7405BDN-T1-GE3

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI7405BDN-T1-GE3 is a P-Channel MOSFET with a 12V drain-source voltage and 16A continuous drain current. It is designed for surface mounting in a PowerPAK 1212-8 package.
✓ Total Stock: 4,758 pcs
$ Price Range: $0.99

SI7405BDN-T1-GE3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,391 pcs
2391 pcs On Request 1 On Request On Request 18+ On Request On Request
Non-Authorised Inventory information
2,367 pcs
2367 pcs On Request 1 On Request On Request 16+ On Request On Request

SI7405BDN-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI7405BDN-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SI7405BDN-T1-GE3 is a P-Channel MOSFET designed for power switching applications. It features a maximum drain-source voltage (Vds) of 12V and a continuous drain current (Id) of 16A at 25°C case temperature.

 

Key electrical characteristics include a low on-resistance (Rds On) of 13mOhm at 13.5A and 4.5V gate-source voltage, and a gate charge (Qg) of 115nC at 8V. The gate-source threshold voltage (Vgs(th)) is 1V at 250µA.

 

This MOSFET is housed in a PowerPAK 1212-8 package, suitable for surface mounting. It operates across a wide temperature range of -55°C to 150°C.

 

Applications include load switching, PA switching, and power switching for portable devices.

SI7405BDN-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SI7405BDN-T1-GE3 P-Channel 12V MOSFET
Subcategory: P-Channel

SI7405BDN-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI7405BDN-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI7405BDN-T1-GE3 Features

  • P-Channel 12V MOSFET
  • 16A continuous drain current
  • Low 13mOhm Rds On
  • Surface mount PowerPAK 1212-8
  • Wide -55°C to 150°C operating temp

SI7405BDN-T1-GE3 Applications

  • Load switch for portable devices
  • PA switch in RF applications
  • Power switch for battery-powered systems
  • DC-DC converter power management
  • Power distribution in compact electronics

SI7405BDN-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage for the SI7405BDN-T1-GE3?

The drain-source voltage (Vds) for the SI7405BDN-T1-GE3 is 12V.

What is the maximum continuous drain current of the SI7405BDN-T1-GE3?

The maximum continuous drain current (Id) for the SI7405BDN-T1-GE3 is 16A at 25°C case temperature.

What is the on-resistance (Rds On) of the SI7405BDN-T1-GE3?

The on-resistance (Rds On) is a maximum of 13mOhm at 13.5A drain current and 4.5V gate-source voltage.

What is the package type for the SI7405BDN-T1-GE3?

The SI7405BDN-T1-GE3 is supplied in a PowerPAK 1212-8 package.

What is the operating temperature range for the SI7405BDN-T1-GE3?

The operating junction and storage temperature range for the SI7405BDN-T1-GE3 is -55°C to 150°C.

Is the SI7405BDN-T1-GE3 RoHS compliant?

The RoHS status for the SI7405BDN-T1-GE3 is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the SI7405BDN-T1-GE3?

The Moisture Sensitivity Level (MSL) for the SI7405BDN-T1-GE3 is 1 Unlimited.

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