| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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359 pcs
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359 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
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| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
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| Rds On (Max) @ Id, Vgs | |
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| Vgs(th) (Max) @ Id | |
| Voltage |
The Vishay Dale Si7404DN-T1-GE3 is a fast-switching N-Channel Power MOSFET designed for applications like Li-Ion battery protection. It offers a drain-source voltage (Vds) of 30V and a continuous drain current (Id) of 8.5A at 25°C ambient temperature, with a typical Rds On of 13mOhm at a Vgs of 10V and a drain current of 13.3A.
This MOSFET utilizes Trench FET technology and comes in a compact PowerPAK® 1212-8 surface-mount package. Key electrical characteristics include a gate-source voltage (Vgs) range of ±12V and a gate threshold voltage (Vgs(th)) of 1.5V at 250µA. The device operates across a wide temperature range from -55°C to 150°C.
Its robust design and specifications make it suitable for various power management tasks. The surface mountable PowerPAK® 1212-8 package facilitates integration into compact electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vds) for the Si7404DN-T1-GE3 is 30V.
The maximum continuous drain current (Id) for the Si7404DN-T1-GE3 is 8.5A at 25°C.
The Rds On for the Si7404DN-T1-GE3 is a maximum of 13mOhm at 13.3A drain current and 10V gate-source voltage.
The Si7404DN-T1-GE3 is in a PowerPAK® 1212-8 package.
The operating junction and storage temperature range for the Si7404DN-T1-GE3 is -55°C to 150°C.
The Si7404DN-T1-GE3 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the Si7404DN-T1-GE3 is 1 Unlimited.