BAT54JFILM-HQ
STMicroelectronics
The STMicroelectronics BAT54JFILM-HQ is a Schottky diode array designed for surface mount applications. It offers a 40V reverse voltage and 200mA average rectified current per diode.
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65 pcs
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65 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Vishay Dale SI7404DN is an N-Channel Vertical DMOS MOSFET suitable for both linear and switching applications. It features a drain-source voltage rating of 30V and is designed for fast switching performance.
Key electrical characteristics include a typical gate threshold voltage of 1.11V and a low drain-source on-state resistance, with values as low as 0.010 Ohms at 10V VGS. The device supports a wide operating temperature range from -55°C to 125°C, ensuring reliable performance in various environments.
Dynamic characteristics such as total gate charge, gate-source charge, and gate-drain charge are provided, along with switching times including turn-on delay, rise time, turn-off delay, and fall time. The MOSFET also exhibits a source-drain reverse recovery time.
This component is intended for surface mount applications and is designed to model gate charge, transient, and diode reverse recovery characteristics accurately.
The drain-source voltage rating for the SI7404DN MOSFET is 30V.
The typical gate threshold voltage (VGS(th)) for the SI7404DN is 1.11V.
The typical drain-source on-state resistance (rDS(on)) at VGS = 10V is 0.01 Ohms.
The SI7404DN operates over a temperature range of -55°C to 125°C.
The typical total gate charge (Qg) for the SI7404DN is 34 nC.
The typical turn-off delay time (td(off)) for the SI7404DN is 64 ns.
The typical fall time (tf) for the SI7404DN is 84 ns.