| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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303 pcs
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303 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
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| Gate Charge | |
| Halogen Free | |
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| Technology | |
| Voltage |
The SI7403BDN-T1-GE3 is a P-Channel MOSFET manufactured by Vishay Siliconix, designed for various electronic applications. It features a maximum drain-source voltage (Vdss) of 20V and can handle a continuous drain current (Id) of 8A at 25°C.
Key electrical characteristics include a maximum on-resistance (Rds On) of 74mOhm at 5.1A and 4.5V, a gate threshold voltage (Vgs(th)) of 1V at 250µA, and a maximum gate-source voltage (Vgs(Max)) of ±8V. The input capacitance (Ciss) is rated at a maximum of 430pF at 10V.
This MOSFET operates within a temperature range of -55°C to 150°C. It is packaged in a surface-mount PowerPAK® 1212-8 configuration, suitable for integration into compact electronic designs. The device utilizes Metal Oxide Semiconductor technology.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.60 | $2.60 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vdss) for the SI7403BDN-T1-GE3 is 20V.
The continuous drain current (Id) at 25°C for the SI7403BDN-T1-GE3 is 8A.
The maximum on-resistance (Rds On) for the SI7403BDN-T1-GE3 is 74mOhm at 5.1A and 4.5V.
The operating temperature range for the SI7403BDN-T1-GE3 is -55°C to 150°C.
The SI7403BDN-T1-GE3 MOSFET is in a surface-mount PowerPAK® 1212-8 package.