| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,960 pcs
|
2960 pcs | On Request | 1 | On Request | On Request | N/A | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The SI7403BDN-T1-E3 is a P-Channel MOSFET manufactured by Vishay Dale. This component features a Drain-Source Breakdown Voltage of 20V and a continuous drain current of 8A (Tc). The Rds On is specified at a maximum of 74mOhm at 5.1A and 4.5V.
Designed for surface mount applications, it comes in a PowerPAK® 1212-8 package. The operating temperature range is -55°C to 150°C (TJ). This MOSFET utilizes Metal Oxide technology.
Key electrical characteristics include a Gate Charge of 15 nC at 8V and a Gate-Source Breakdown Voltage of ±8V. The maximum power dissipation is 3.1W (Ta) or 9.6W (Tc).
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
20 V.
PowerPAK 1212-8.
-55°C to 150°C (junction).
74 mOhm at 5.1 A drain current and 4.5 V gate drive.
1 V at 250 µA drain current.
8 A at case temperature (Tc).
Metal-Oxide (MOSFET).