| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,000 pcs
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3000 pcs | On Request | 1 | On Request | On Request | 07+ | On Request | On Request |
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The Vishay Dale SI7392DP-T1-E3 is an N-Channel MOSFET designed for high-side DC/DC conversion applications in notebooks and servers. It features a 30V drain-source voltage and a continuous drain current of 9A at 25°C ambient temperature.
Key electrical characteristics include a low on-resistance of 9.75 mΩ at 15A and 10V Vgs, and a gate threshold voltage of 3V at 250µA. The device also offers a gate charge of 15 nC at 4.5V Vgs, contributing to low switching losses.
This MOSFET is housed in a compact PowerPAK SO-8 surface mount package with a low profile of 1.07 mm. The operating temperature range is -55°C to 150°C (TJ). The part is RoHS3 compliant and features halogen-free construction according to IEC 61249-2-21 definition.
Applications include high-side DC/DC conversion. The TrenchFET Power MOSFET technology ensures reduced gate charge for improved switching performance.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vds) is 30 V.
The continuous drain current is 9A at 25°C ambient temperature.
The maximum on-resistance is 9.75 mΩ at 15A drain current and 10V gate-source voltage.
The package type is PowerPAK SO-8.
The operating junction and storage temperature range is -55°C to 150°C.
Yes, the SI7392DP-T1-E3 is RoHS3 Compliant.
Yes, the SI7392DP-T1-E3 is halogen-free.