SI7392ADP-T1-E3 The Vishay Dale Si7392ADP-T1-E3 is an N-Channel MOSFET designed for high-side DC/DC conversion. It features a 30V drain-source voltage and a continuous drain current of 30A.
Mfr Part #:

SI7392ADP-T1-E3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale Si7392ADP-T1-E3 is an N-Channel MOSFET designed for high-side DC/DC conversion. It features a 30V drain-source voltage and a continuous drain current of 30A.
✓ Total Stock: 2,217 pcs
$ Price Range: $0.99

SI7392ADP-T1-E3 Available from 1 distributor

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SI7392ADP-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI7392ADP-T1-E3 Description

Short technical summary and product information.

The Vishay Dale Si7392ADP-T1-E3 is a high-performance N-Channel MOSFET utilizing TrenchFET power technology. It is designed for applications such as high-side DC/DC conversion in notebooks and servers.

 

Key electrical characteristics include a drain-source voltage of 30V and a low on-resistance of 7.5mOhm at 12.5A and 10V Vgs. The device also offers a gate charge of 38nC at 10V Vgs and an input capacitance of 1465pF at 15V Vds.

 

This MOSFET is housed in a low-profile PowerPAK SO-8 package, suitable for surface mounting. It operates within a temperature range of -55°C to 150°C.

 

The Si7392ADP-T1-E3 is halogen-free and compliant with RoHS Directive 2002/95/EC.

SI7392ADP-T1-E3 Quick Information

Product Type: MOSFET
Series: TrenchFET
Canonical Name: Vishay Dale Si7392ADP N-Channel MOSFET
Subcategory: N-Channel

SI7392ADP-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI7392ADP-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI7392ADP-T1-E3 Features

  • N-Channel MOSFET with TrenchFET technology.
  • 30V Drain-Source Voltage rating.
  • Low Rds On: 7.5mOhm at 12.5A, 10V.
  • Low profile PowerPAK SO-8 package.
  • Halogen-free and RoHS compliant.

SI7392ADP-T1-E3 Applications

  • Ideal for high-side DC/DC conversion.
  • Suitable for notebook applications.
  • Used in server power supplies.
  • Efficient power switching designs.

SI7392ADP-T1-E3 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage for the Si7392ADP-T1-E3?

The drain-source voltage is 30V.

What is the maximum continuous drain current for the Si7392ADP-T1-E3?

The maximum continuous drain current is 30A at 25°C case temperature.

What is the Rds On of the Si7392ADP-T1-E3?

The Rds On is a maximum of 7.5mOhm at 12.5A and 10V Vgs.

What is the package type for the Si7392ADP-T1-E3?

The package type is PowerPAK SO-8.

What is the operating temperature range for the Si7392ADP-T1-E3?

The operating junction and storage temperature range is -55°C to 150°C.

Is the Si7392ADP-T1-E3 RoHS compliant?

Yes, the RoHS status is RoHS3 Compliant.

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