| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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279 pcs
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279 pcs | On Request | 1 | On Request | On Request | 1145+ | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI7388DP-T1-GE3 is an N-Channel MOSFET designed for power switching applications. It features a maximum drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 12A at 25°C.
Key electrical characteristics include a low on-resistance (Rds On) of 7mOhm at 19A and 10V Vgs, and a gate charge (Qg) of 24nC at 5V Vgs. The gate threshold voltage (Vgs(th)) is 1.6V maximum at 250µA Id. The device operates within a temperature range of -55°C to 150°C (TJ).
This MOSFET utilizes Metal Oxide Semiconductor technology and is supplied in a Surface Mount PowerPAK SO-8 package. Its maximum power dissipation is rated at 1.9W (Ta). The device is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30 V
PowerPAK SO-8
-55°C to 150°C
7 milliohms
24 nanocoulombs at 5V gate voltage
12 amperes at 25°C ambient temperature