SI7386DP-T1-E3 The Vishay Dale SI7386DP-T1-E3 is an N-Channel MOSFET with a 30V Drain-Source Voltage and 19A Continuous Drain Current. It features a low 7mOhm Rds On and is available in a Surface Mount PowerPAK SO-8 package.
Mfr Part #:

SI7386DP-T1-E3

Available from 5 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI7386DP-T1-E3 is an N-Channel MOSFET with a 30V Drain-Source Voltage and 19A Continuous Drain Current. It features a low 7mOhm Rds On and is available in a Surface Mount PowerPAK SO-8 package.
✓ Total Stock: 129,147 pcs
$ Price Range: $0.99

SI7386DP-T1-E3 Available from 5 distributors

✓ Authorised
✓ Non-Authorised

SI7386DP-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI7386DP-T1-E3 Description

Short technical summary and product information.

The Vishay Dale SI7386DP-T1-E3 is a high-performance N-Channel MOSFET designed for various electronic applications. It offers a Drain-Source Breakdown Voltage of 30V and a Continuous Drain Current rating of 19A, making it suitable for power switching and amplification tasks.

 

Key electrical characteristics include a low On-Resistance (Rds On) of 7mOhm at 19A and 10V Vgs, ensuring efficient power transfer with minimal losses. The Gate-Source Breakdown Voltage is ±20V, and the Gate Charge (Qg) is 18 nC at 4.5V Vgs. The MOSFET operates within a temperature range of -55°C to 150°C.

 

This component is housed in a Surface Mount PowerPAK® SO-8 package, facilitating compact PCB designs. Its technology is based on Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) principles. The device also features fast switching times with a rise time of 9 ns and a fall time of 10 ns, and a typical turn-off delay time of 35 ns.

 

The SI7386DP-T1-E3 is RoHS3 Compliant and has an MSL rating of 1, indicating unlimited shelf life under recommended storage conditions.

SI7386DP-T1-E3 Quick Information

Product Type: MOSFET
Canonical Name: SI7386DP-T1-E3 N-Channel MOSFET
Subcategory: N-Channel

SI7386DP-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI7386DP-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI7386DP-T1-E3 Features

  • 30V Drain-Source Breakdown Voltage.
  • 19A Continuous Drain Current.
  • Low 7mOhm Rds On at 19A.
  • Surface Mount PowerPAK SO-8 package.
  • Fast switching times: 9ns rise, 10ns fall.

SI7386DP-T1-E3 Applications

  • Suitable for power switching applications.
  • Ideal for efficient power transfer.
  • Used in compact electronic designs.
  • Designed for high-frequency circuits.

SI7386DP-T1-E3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the Drain-Source Breakdown Voltage?

The Drain-Source Breakdown Voltage is 30 V.

What is the maximum continuous drain current?

The maximum continuous drain current is 19 A.

What is the Rds On at the specified conditions?

The Rds On is a maximum of 7 mOhm at 19A drain current and 10V gate-source voltage.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C.

What type of package is this MOSFET in?

This MOSFET is in a PowerPAK SO-8 package for surface mounting.

Is this product RoHS compliant?

Yes, this product is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL)?

The Moisture Sensitivity Level is 1.

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