| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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6,000 pcs
|
6000 pcs | On Request | 1 | On Request | On Request | 1722+ | On Request | On Request |
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The SI7384DP-T1-E3 is an N-Channel enhancement-mode MOSFET from Vishay Dale, designed for efficient power switching applications. It features a maximum drain-to-source voltage (Vdss) of 30V and a continuous drain current rating of 11A at 25°C ambient temperature.
Key electrical characteristics include a low maximum on-resistance of 8.5mOhm at 18A drain current and 10V gate-source voltage, enabling high efficiency in power conversion circuits. The gate threshold voltage is 3V maximum at 250µA drain current, and the maximum gate charge is 18nC at 4.5V, supporting fast switching performance.
The device is housed in a PPAK SO-8 surface-mount package, suitable for automated assembly. Maximum power dissipation is 1.8W at 25°C ambient. This MOSFET is appropriate for load switching, DC-DC converter, and low-voltage power management applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
11A at 25°C ambient temperature.
8.5mOhm maximum at 18A drain current and 10V gate-source voltage.
3V maximum at 250µA drain current.
PPAK SO-8.