SI7370DP-T1-GE3 The Vishay Dale SI7370DP-T1-GE3 is a N-Channel MOSFET with a maximum drain-source voltage of 60V and continuous drain current of 9.6A. It features a PPAK SO-8 package for surface mounting.
Mfr Part #:

SI7370DP-T1-GE3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI7370DP-T1-GE3 is a N-Channel MOSFET with a maximum drain-source voltage of 60V and continuous drain current of 9.6A. It features a PPAK SO-8 package for surface mounting.
✓ Total Stock: 5,014 pcs
$ Price Range: $0.99

SI7370DP-T1-GE3 Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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5,014 pcs
5014 pcs On Request 1 On Request On Request 2020+ On Request On Request

SI7370DP-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI7370DP-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SI7370DP-T1-GE3 is a N-Channel MOSFET designed for power switching applications. It has a maximum drain-source voltage (Vdss) of 60V and a continuous drain current of 9.6A at 25°C. The device features a low Rds On (max 0.011 Ohm at 12A, 10V), which makes it suitable for high-efficiency power management circuits. The package type is PPAK SO-8, enabling surface mounting on printed circuit boards. Its electrical characteristics include a gate charge of 57 nC at Vgs = 10V (max) and a typical gate charge of 46 nC. The device is used in various power switching, load switching, and motor control applications where efficient power handling is required.

SI7370DP-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SI7370DP-T1-GE3

SI7370DP-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: Compliant

SI7370DP-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI7370DP-T1-GE3 Features

  • Maximum drain-source voltage of 60V
  • Continuous drain current of 9.6A
  • Low Rds On of 0.011 Ohm at 12A, 10V
  • Gate charge of 57 nC at 10V
  • PPAK SO-8 surface-mount package

SI7370DP-T1-GE3 Applications

  • Used in power switching circuits
  • Suitable for load control applications
  • Ideal for motor driver circuits
  • Surface-mount design for compact assemblies

SI7370DP-T1-GE3 FAQs

4 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the SI7370DP-T1-GE3?

The maximum drain-source voltage (Vdss) is 60 V.

What is the continuous drain current rating for this MOSFET?

The continuous drain current is 9.6 A at 25°C.

What package type does the SI7370DP-T1-GE3 use?

It uses a PPAK SO-8 surface-mount package.

What is the Rds On maximum value at 10V Vgs?

The maximum Rds On is 0.011 Ohm at 12A, 10V.

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