| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
120,533 pcs
|
120533 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This Vishay Dale SI7366DP-T1-GE3 is an N-Channel MOSFET with a drain-to-source voltage (Vdss) of 20V. It is designed for surface mount installation within a PowerPAK SO-8 package.
The MOSFET offers a continuous drain current of 13A (Ta) and a maximum on-resistance (Rds On) of 5.5mOhm when tested at 20A and 10V gate-source voltage. The gate charge (Qg) is 25nC at 4.5V, and the gate threshold voltage (Vgs(th)) is 3V maximum at 250µA.
Operating temperature ranges from -55°C to 150°C (TJ). The device utilizes MOSFET (Metal Oxide) technology and has a maximum gate-to-source voltage (Vgs) of ±20V. Power dissipation is rated at 1.7W (Ta).
This component is suitable for various electronic applications requiring efficient switching and power management. Its surface mount package facilitates integration into compact PCB designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 20V.
The maximum continuous drain current is 13A at ambient temperature.
The maximum on-resistance is 5.5mOhm at 20A drain current and 10V gate drive.
The operating junction temperature range is -55°C to 150°C.
It is available in a PowerPAK SO-8 surface mount package.
The maximum gate threshold voltage is 3V at 250µA drain current.
The maximum gate charge is 25nC at 4.5V gate drive.