| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,219 pcs
|
2219 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,219 pcs
|
2219 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
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The Vishay SI7336DP is an N-Channel MOSFET with a maximum drain-source voltage (VDS) of 30V and a continuous drain current (ID) of 18A at 25°C. It offers a low on-state resistance (rDS(on)) of 0.0024 Ohms typical at VGS = 10V, making it efficient for power applications.
This MOSFET is packaged in a PowerPAK SO-8, a surface-mount package suitable for various electronic designs. The operating junction and storage temperature range is from -55°C to 150°C. Key electrical parameters include a gate-threshold voltage (VGS(th)) between 1V and 3V, and dynamic characteristics such as total gate charge (Qg) of 36nC typical.
With its robust specifications, the SI7336DP is suitable for applications requiring efficient power handling and switching. Its thermal characteristics include a junction-to-ambient thermal resistance (RthJA) of 65°C/W and a junction-to-case thermal resistance of 1.5°C/W.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (VDS) for the SI7336DP is 30V.
The continuous drain current (ID) of the SI7336DP at 25°C is 18A.
The typical on-resistance (rDS(on)) of the SI7336DP is 0.0024 Ohms at VGS = 10V.
The SI7336DP is available in the PowerPAK SO-8 package.
The operating junction and storage temperature range for the SI7336DP is -55°C to 150°C.