| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,020 pcs
|
4020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
310 pcs
|
310 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI7336ADP-T1-GE3 is an N-Channel MOSFET designed for power applications. It offers a drain-source voltage of 30V and a continuous drain current of 30A at 25°C. The MOSFET utilizes TrenchFET® Gen II Power MOSFET Technology, providing ultra-low on-resistance.
Key electrical characteristics include a maximum on-resistance of 3mOhm at 25A and 10V, and 4.5V drive voltage. It has a gate charge of 50 nC at 4.5V and an input capacitance of 5600 pF at 15V.
The device operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 5.4W at 25°C. It is housed in a PowerPAK® SO-8 package, suitable for surface mounting.
Applications include low-side DC/DC conversion in notebooks, servers, and workstations. The MOSFET is designed with a low profile of 1.07 mm and features optimized gate charge and low thermal resistance.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 30V.
The component is housed in a PowerPAK SO-8 surface-mount package and supplied in reel packaging.
The device operates reliably within a junction temperature range of -55°C to +150°C.
The typical on-resistance (Rds(on)) is 3mΩ when driven at 10V.
It supports a continuous drain current of 30A at 25°C ambient temperature.
The device exhibits a typical rise time of 16ns and a fall time of 32ns.