SI7326DN-T1-GE3 The Vishay Dale SI7326DN-T1-GE3 is an N-Channel MOSFET with a 30V drain-source breakdown voltage and a continuous drain current of 6.5A. It features a low Rds(on) of 19.5mOhm at 10A, 10V.
Mfr Part #:

SI7326DN-T1-GE3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI7326DN-T1-GE3 is an N-Channel MOSFET with a 30V drain-source breakdown voltage and a continuous drain current of 6.5A. It features a low Rds(on) of 19.5mOhm at 10A, 10V.
✓ Total Stock: 11,337 pcs
$ Price Range: $0.99

SI7326DN-T1-GE3 Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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11,337 pcs
11337 pcs On Request 1 On Request On Request 1122+1109+ On Request On Request

SI7326DN-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI7326DN-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SI7326DN-T1-GE3 is a fast-switching N-Channel MOSFET designed for applications such as DC/DC conversion. It offers a drain-source breakdown voltage of 30V and a continuous drain current of 6.5A at 25°C ambient temperature.

 

Key electrical characteristics include a maximum on-state resistance (Rds(on)) of 19.5mOhm when driven at 10A with a gate-source voltage of 10V. The gate threshold voltage is a maximum of 1.8V at 250µA. The device operates within a temperature range of -55°C to 150°C.

 

This MOSFET is housed in a compact PowerPAK® 1212-8 surface-mount package with a low profile. It is available in a tape and reel format, with a factory pack quantity of 3000 units. The device is also noted as being halogen-free according to IEC 61249-2-21 standards.

SI7326DN-T1-GE3 Quick Information

Product Type: MOSFET
Series: Si7
Canonical Name: Vishay Siliconix Si7326DN N-Channel 30V Fast Switching MOSFET
Subcategory: N-Channel

SI7326DN-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI7326DN-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI7326DN-T1-GE3 Features

  • 30V drain-source breakdown voltage.
  • 6.5A continuous drain current.
  • Low Rds(on) of 19.5mOhm at 10A, 10V.
  • Compact PowerPAK 1212-8 package.
  • Halogen-free according to IEC 61249-2-21.

SI7326DN-T1-GE3 Applications

  • Ideal for DC-DC converter synchronous rectification.
  • Used in portable battery-powered device power switches.
  • Suitable for automotive load switching applications.
  • Designed for industrial motor control driver stages.
  • Applied in server power supply distribution networks.

SI7326DN-T1-GE3 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage for the SI7326DN-T1-GE3?

The drain-source breakdown voltage is 30V.

What is the maximum continuous drain current?

The maximum continuous drain current is 6.5A at 25°C ambient temperature.

What is the Rds(on) of the SI7326DN-T1-GE3?

The Rds(on) is a maximum of 19.5mOhm at 10A drain current and 10V gate-source voltage.

What is the operating temperature range for this MOSFET?

The operating temperature range is -55°C to 150°C.

What package type is the SI7326DN-T1-GE3 supplied in?

It is supplied in a PowerPAK 1212-8 surface-mount package.

Is this MOSFET halogen-free?

Yes, it is halogen-free according to IEC 61249-2-21.

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