SI7322ADN-T1-GE3 The Vishay Dale SI7322ADN-T1-GE3 is an N-Channel MOSFET with a 100V drain-source voltage and 15.1A continuous drain current. It features a low Rds(on) of 57mOhm at 10V.
Mfr Part #:

SI7322ADN-T1-GE3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI7322ADN-T1-GE3 is an N-Channel MOSFET with a 100V drain-source voltage and 15.1A continuous drain current. It features a low Rds(on) of 57mOhm at 10V.
✓ Total Stock: 3,000 pcs
$ Price Range: $0.99

SI7322ADN-T1-GE3 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
3,000 pcs
3000 pcs On Request 1 On Request On Request 20+ On Request On Request

SI7322ADN-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI7322ADN-T1-GE3 Description

Short technical summary and product information.

This Vishay Dale SI7322ADN-T1-GE3 is an N-Channel MOSFET designed for various applications including fixed telecom, DC/DC converters, and LED lighting. It utilizes ThunderFET technology for optimized performance.

 

The device offers a drain-source voltage of 100V and a continuous drain current rating of 15.1A at 25°C case temperature. The on-resistance (Rds(on)) is a maximum of 57mOhm at 10V gate-source voltage and 5.5A drain current. Key electrical parameters include an input capacitance of 360pF at 50V and a typical gate charge of 8.4nC.

 

Operating within a temperature range of -55°C to 150°C (TJ), the MOSFET has a maximum power dissipation of 26W (Tc) at 25°C. It is housed in a PowerPAK® 1212-8 package, designed for surface mounting.

 

Absolute maximum ratings include a gate-source voltage of ±20V and a pulsed drain current of 20A. The component is tested for Rg and UIS, with material categorization for compliance available.

SI7322ADN-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SI7322ADN-T1-GE3 N-Channel 100V PowerPAK MOSFET
Subcategory: N-Channel

SI7322ADN-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI7322ADN-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI7322ADN-T1-GE3 Features

  • N-Channel 100V MOSFET technology.
  • Optimized ThunderFET performance characteristics.
  • Low Rds(on) of 57mOhm at 10V.
  • 15.1A continuous drain current.
  • Surface mount PowerPAK 1212-8 package.

SI7322ADN-T1-GE3 Applications

  • Suitable for fixed telecom applications.
  • Used in DC/DC converter designs.
  • Primary and secondary side switching.
  • Ideal for LED lighting circuits.

SI7322ADN-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage for the SI7322ADN-T1-GE3?

The drain-source voltage is 100V.

What is the maximum continuous drain current?

The maximum continuous drain current is 15.1A at 25°C case temperature.

What is the Rds On at maximum conditions?

The Rds On is a maximum of 57mOhm at 5.5A drain current and 10V gate-source voltage.

What is the operating temperature range?

The operating junction and storage temperature range is -55°C to 150°C.

What is the package type for this MOSFET?

The package type is PowerPAK® 1212-8, designed for surface mounting.

Is this MOSFET RoHS compliant?

Yes, it is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL)?

The Moisture Sensitivity Level is 1 Unlimited.

Home
Account

Categories