SI7317DN-T1-GE3 The Vishay Dale SI7317DN-T1-GE3 is a P-Channel MOSFET with a 150V drain-source voltage and 2.8A continuous drain current. It comes in a PowerPAK 1212-8 package.
Mfr Part #:

SI7317DN-T1-GE3

Available from 3 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI7317DN-T1-GE3 is a P-Channel MOSFET with a 150V drain-source voltage and 2.8A continuous drain current. It comes in a PowerPAK 1212-8 package.
✓ Total Stock: 8,060 pcs
$ Price Range: $0.99

SI7317DN-T1-GE3 Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
4,900 pcs
4900 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
3,000 pcs
3000 pcs On Request 1 On Request On Request 21+ On Request On Request
Non-Authorised Inventory information
160 pcs
160 pcs On Request 1 On Request On Request On Request On Request On Request

SI7317DN-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Conflict Minerals
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI7317DN-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SI7317DN-T1-GE3 is a P-Channel MOSFET designed for power applications. It features a maximum drain-source voltage (Vds) of 150V and a continuous drain current (Id) of 2.8A at 25°C case temperature.

 

This MOSFET utilizes TrenchFET technology and is housed in a PowerPAK 1212-8 package, offering low thermal resistance. Key electrical characteristics include a maximum on-resistance (Rds(on)) of 1.2 Ohms at 10V Vgs and a gate charge (Qg) of 9.8 nC at 10V Vgs.

 

Applications for the SI7317DN-T1-GE3 include active clamp circuits in DC/DC power supplies and load switching. The device operates within a junction temperature range of -55°C to 150°C.

 

It is surface-mounted and designed for efficient thermal management. The part is also noted as being lead (Pb)-free and halogen-free.

SI7317DN-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SI7317DN-T1-GE3 P-Channel 150V Power MOSFET
Subcategory: Transistors - FETs

SI7317DN-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: lead (Pb)-free

SI7317DN-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI7317DN-T1-GE3 Features

  • P-Channel 150V Power MOSFET
  • 2.8A continuous drain current
  • Low Rds(on) of 1.2 Ohms
  • PowerPAK 1212-8 package
  • Lead and halogen-free construction

SI7317DN-T1-GE3 Applications

  • High-side load switching applications.
  • Power management in DC-DC converters.
  • Battery protection circuits.
  • Motor control in low-power systems.

SI7317DN-T1-GE3 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

-150V maximum.

What package is the SI7317DN-T1-GE3 available in?

PowerPAK 1212-8 surface-mount package.

What is the operating junction temperature range?

-55°C to 150°C.

What is the maximum continuous drain current?

-2.8A at TC=25°C.

What is the gate threshold voltage?

4.5V maximum at 250µA.

What is the on-resistance?

1.2Ohm maximum at Vgs=-10V and Id=500mA.

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