SI7309DN-T1-GE3

The SI7309DN-T1-GE3 is a single P-Channel enhancement mode MOSFET manufactured by Vishay Dale. Designed for efficient power switching applications, this component features a maximum drain-to-source voltage of 60V and supports a continuous drain current of 8A at case temperature. With a maximum on-resistance of 115mΩ at 10V gate drive, it ensures minimal conduction losses. The device operates reliably across an extended junction temperature range of -55°C to 150°C. Packaged in the space-saving PowerPAK 1212-8 footprint, it is optimized for surface mount assembly. Key electrical characteristics include a gate charge of 22nC and an input capacitance of 600pF, facilitating fast switching performance in compact power management circuits.

This MOSFET is engineered to deliver robust performance in demanding electronic environments. The exposed thermal pad design of the PowerPAK 1212-8 package enhances heat dissipation, allowing up to 19.8W of power dissipation when mounted directly to a heatsink. Its low threshold voltage and fast switching speeds make it highly suitable for battery-operated systems where efficiency and board space are critical constraints.

Procurement teams can rely on this part for standard industrial and consumer electronics supply chains. Design engineers will appreciate its straightforward drive requirements and predictable thermal behavior. Verify all application-specific parameters against official documentation before finalizing circuit designs.