| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
56,500 pcs
|
56500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Failure Rate | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The SI7309DN-T1-E3 from Vishay Dale is a P-Channel MOSFET with a drain-source voltage (Vdss) of 60V and a continuous drain current (Id) of 8A at 25°C.
This MOSFET utilizes Metal Oxide Semiconductor (MOSFET) technology and is housed in a PowerPAK® 1212-8 surface mount package. Key electrical characteristics include a maximum on-resistance (Rds On) of 115mOhm at 3.9A and 10V gate-source voltage, a maximum gate charge (Qg) of 22 nC at 10V, and an input capacitance (Ciss) of 600 pF at 30V.
The device operates within a temperature range of -55°C to 150°C (TJ). It requires a drive voltage between 4.5V and 10V for optimal performance. The maximum gate source voltage (Vgs) is ±20V, and the gate threshold voltage (Vgs(th)) is 3V at 250µA.
With a power dissipation of 3.2W (Ta) and 19.8W (Tc), this MOSFET is suitable for various power management applications. It is supplied in Tape & Reel packaging.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
60V
8A at case temperature
115mOhm at 3.9A and 10V gate drive
PowerPAK 1212-8 surface mount package
-55°C to 150°C
±20V
22nC at 10V gate drive